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IXGT28N60BD1

IXGT28N60BD1

For Reference Only

Part Number IXGT28N60BD1
PNEDA Part # IXGT28N60BD1
Description IGBT 600V 40A 150W TO268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGT28N60BD1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGT28N60BD1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGT28N60BD1, IXGT28N60BD1 Datasheet (Total Pages: 6, Size: 513.55 KB)
PDFIXGT28N60BD1 Datasheet Cover
IXGT28N60BD1 Datasheet Page 2 IXGT28N60BD1 Datasheet Page 3 IXGT28N60BD1 Datasheet Page 4 IXGT28N60BD1 Datasheet Page 5 IXGT28N60BD1 Datasheet Page 6

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IXGT28N60BD1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 28A
Power - Max150W
Switching Energy2mJ (off)
Input TypeStandard
Gate Charge68nC
Td (on/off) @ 25°C15ns/175ns
Test Condition480V, 28A, 10Ohm, 15V
Reverse Recovery Time (trr)25ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

120µJ (on), 150µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

200V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 15A

Power - Max

150W

Switching Energy

1.5mJ (off)

Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

30ns/148ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

3600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

420A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

46ns/205ns

Test Condition

960V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

TO-247PLUS-HV

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

560W

Switching Energy

4.4mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

136ns/360ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

IXBT10N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

3.8V @ 15V, 10A

Power - Max

140W

Switching Energy

6mJ (off)

Input Type

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Gate Charge

30nC

Td (on/off) @ 25°C

35ns/500ns

Test Condition

1360V, 10A, 56Ohm, 15V

Reverse Recovery Time (trr)

360ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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