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IXLF19N250A

IXLF19N250A

For Reference Only

Part Number IXLF19N250A
PNEDA Part # IXLF19N250A
Description IGBT 2500V 32A 250W I4PAC
Manufacturer IXYS
Unit Price
1 ---------- $60.3620
100 ---------- $57.5325
250 ---------- $54.7030
500 ---------- $51.8736
750 ---------- $49.5157
1,000 ---------- $47.1578
In Stock 354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXLF19N250A Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXLF19N250A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXLF19N250A, IXLF19N250A Datasheet (Total Pages: 4, Size: 62.51 KB)
PDFIXLF19N250A Datasheet Cover
IXLF19N250A Datasheet Page 2 IXLF19N250A Datasheet Page 3 IXLF19N250A Datasheet Page 4

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IXLF19N250A Specifications

ManufacturerIXYS
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)32A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 19A
Power - Max250W
Switching Energy15mJ (on), 30mJ (off)
Input TypeStandard
Gate Charge142nC
Td (on/off) @ 25°C-
Test Condition1500V, 19A, 47Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Casei4-Pac™-5 (3 Leads)
Supplier Device PackageISOPLUS i4-PAC™

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

3.5mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

422nC

Td (on/off) @ 25°C

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Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 120A

Power - Max

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Switching Energy

1.8mJ (on), 4.41mJ (off)

Input Type

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Gate Charge

420nC

Td (on/off) @ 25°C

66ns/185ns

Test Condition

400V, 120A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

330W

Switching Energy

1.2mJ (off)

Input Type

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Gate Charge

143nC

Td (on/off) @ 25°C

-/359ns

Test Condition

600V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

86A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

800µJ (on), 1.25mJ (off)

Input Type

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Gate Charge

68nC

Td (on/off) @ 25°C

20ns/140ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

IRG8CH29K10D

Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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