Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTA130N10T-TRL

IXTA130N10T-TRL

For Reference Only

Part Number IXTA130N10T-TRL
PNEDA Part # IXTA130N10T-TRL
Description MOSFET N-CH 100V 130A TO263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,690
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA130N10T-TRL Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA130N10T-TRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA130N10T-TRL, IXTA130N10T-TRL Datasheet (Total Pages: 5, Size: 148.66 KB)
PDFIXTA130N10T-TRL Datasheet Cover
IXTA130N10T-TRL Datasheet Page 2 IXTA130N10T-TRL Datasheet Page 3 IXTA130N10T-TRL Datasheet Page 4 IXTA130N10T-TRL Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTA130N10T-TRL Datasheet
  • where to find IXTA130N10T-TRL
  • IXYS

  • IXYS IXTA130N10T-TRL
  • IXTA130N10T-TRL PDF Datasheet
  • IXTA130N10T-TRL Stock

  • IXTA130N10T-TRL Pinout
  • Datasheet IXTA130N10T-TRL
  • IXTA130N10T-TRL Supplier

  • IXYS Distributor
  • IXTA130N10T-TRL Price
  • IXTA130N10T-TRL Distributor

IXTA130N10T-TRL Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs104nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5080pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

ZVN4525ZTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

240mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.4V, 10V

Rds On (Max) @ Id, Vgs

8.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.65nC @ 10V

Vgs (Max)

±40V

Input Capacitance (Ciss) (Max) @ Vds

72pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89-3

Package / Case

TO-243AA

SPW52N50C3FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2.7mA

Gate Charge (Qg) (Max) @ Vgs

290nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 25V

FET Feature

-

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

SIJ470DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

58.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 56.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPA80R1K4CEXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id

3.9V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 100V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

BUK6E3R4-40C,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

8020pF @ 25V

FET Feature

-

Power Dissipation (Max)

204W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

SMBJ36A-13-F

SMBJ36A-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

FN2070-36-08

FN2070-36-08

Schaffner EMC

LINE FILTER 110/250VAC 36A CHASS

N25Q256A13ESF40G

N25Q256A13ESF40G

Micron Technology Inc.

IC FLASH 256M SPI 108MHZ 16SOP2

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

ADA4870ARRZ

ADA4870ARRZ

Analog Devices

IC OPAMP CFA 1 CIRCUIT 20PSOP3

AS5047P-ATSM

AS5047P-ATSM

ams

ROTARY ENCODER MAGNETIC PROG

24LC32A-I/ST

24LC32A-I/ST

Microchip Technology

IC EEPROM 32K I2C 400KHZ 8TSSOP

SMCJ24A-13-F

SMCJ24A-13-F

Diodes Incorporated

TVS DIODE 24V 38.9V SMC

SP0503BAHTG

SP0503BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

BZT52C4V3-7

BZT52C4V3-7

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

MIC2026-1YM-TR

MIC2026-1YM-TR

Microchip Technology

IC PW DIST SW DUAL 8SOIC