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IXTH110N10L2

IXTH110N10L2

For Reference Only

Part Number IXTH110N10L2
PNEDA Part # IXTH110N10L2
Description MOSFET N-CH 100V 110A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH110N10L2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH110N10L2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH110N10L2, IXTH110N10L2 Datasheet (Total Pages: 5, Size: 136.23 KB)
PDFIXTT110N10L2 Datasheet Cover
IXTT110N10L2 Datasheet Page 2 IXTT110N10L2 Datasheet Page 3 IXTT110N10L2 Datasheet Page 4 IXTT110N10L2 Datasheet Page 5

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IXTH110N10L2 Specifications

ManufacturerIXYS
SeriesLinear L2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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