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IXTH13N80

IXTH13N80

For Reference Only

Part Number IXTH13N80
PNEDA Part # IXTH13N80
Description MOSFET N-CH 800V 13A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH13N80 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH13N80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH13N80, IXTH13N80 Datasheet (Total Pages: 4, Size: 71.87 KB)
PDFIXTH13N80 Datasheet Cover
IXTH13N80 Datasheet Page 2 IXTH13N80 Datasheet Page 3 IXTH13N80 Datasheet Page 4

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IXTH13N80 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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