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IXTH6N100D2

IXTH6N100D2

For Reference Only

Part Number IXTH6N100D2
PNEDA Part # IXTH6N100D2
Description MOSFET N-CH 1000V 6A TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,764
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH6N100D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH6N100D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH6N100D2, IXTH6N100D2 Datasheet (Total Pages: 5, Size: 165.03 KB)
PDFIXTP6N100D2 Datasheet Cover
IXTP6N100D2 Datasheet Page 2 IXTP6N100D2 Datasheet Page 3 IXTP6N100D2 Datasheet Page 4 IXTP6N100D2 Datasheet Page 5

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IXTH6N100D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs95nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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