Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTP3N50D2

IXTP3N50D2

For Reference Only

Part Number IXTP3N50D2
PNEDA Part # IXTP3N50D2
Description MOSFET N-CH 500V 3A TO220AB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP3N50D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP3N50D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP3N50D2, IXTP3N50D2 Datasheet (Total Pages: 5, Size: 149.35 KB)
PDFIXTP3N50D2 Datasheet Cover
IXTP3N50D2 Datasheet Page 2 IXTP3N50D2 Datasheet Page 3 IXTP3N50D2 Datasheet Page 4 IXTP3N50D2 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTP3N50D2 Datasheet
  • where to find IXTP3N50D2
  • IXYS

  • IXYS IXTP3N50D2
  • IXTP3N50D2 PDF Datasheet
  • IXTP3N50D2 Stock

  • IXTP3N50D2 Pinout
  • Datasheet IXTP3N50D2
  • IXTP3N50D2 Supplier

  • IXYS Distributor
  • IXTP3N50D2 Price
  • IXTP3N50D2 Distributor

IXTP3N50D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1070pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

STP20NM50FD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 25V

FET Feature

-

Power Dissipation (Max)

192W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SUP28N15-52-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

52mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1725pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SISS67DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen III

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

111nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4380pF @ 15V

FET Feature

-

Power Dissipation (Max)

65.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S (3.3x3.3)

Package / Case

PowerPAK® 1212-8S

Manufacturer

IXYS

Series

GigaMOS™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

465A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

545nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

41000pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DE475

Package / Case

DE475

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

18.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1005pF @ 15V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Recently Sold

ADM3202ARUZ-REEL7

ADM3202ARUZ-REEL7

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

RJR26FW102R

RJR26FW102R

Bourns

TRIMMER 1K OHM 0.25W PC PIN TOP

FNM-30

FNM-30

Eaton - Bussmann Electrical Division

FUSE CARTRIDGE 30A 250VAC 5AG

XC7Z020-2CLG484I

XC7Z020-2CLG484I

Xilinx

IC SOC CORTEX-A9 766MHZ 484BGA

AD9850BRSZ

AD9850BRSZ

Analog Devices

IC DDS 125MHZ 10BIT 28SSOP

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

LT1965EDD#PBF

LT1965EDD#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8DFN

LM393DT

LM393DT

Rohm Semiconductor

IC COMPARATOR DUAL 0.4MA 8-SOIC

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

BCR30AM-12LB#B00

BCR30AM-12LB#B00

Renesas Electronics America

TRIAC 600V 30A TO3P

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

PDTC143ZT,235

PDTC143ZT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB