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IXXK110N65B4H1

IXXK110N65B4H1

For Reference Only

Part Number IXXK110N65B4H1
PNEDA Part # IXXK110N65B4H1
Description IGBT 650V 240A 880W TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXK110N65B4H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXK110N65B4H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXXK110N65B4H1, IXXK110N65B4H1 Datasheet (Total Pages: 7, Size: 245.78 KB)
PDFIXXK110N65B4H1 Datasheet Cover
IXXK110N65B4H1 Datasheet Page 2 IXXK110N65B4H1 Datasheet Page 3 IXXK110N65B4H1 Datasheet Page 4 IXXK110N65B4H1 Datasheet Page 5 IXXK110N65B4H1 Datasheet Page 6 IXXK110N65B4H1 Datasheet Page 7

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IXXK110N65B4H1 Specifications

ManufacturerIXYS
SeriesGenX4™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)240A
Current - Collector Pulsed (Icm)630A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 110A
Power - Max880W
Switching Energy2.2mJ (on), 1.05mJ (off)
Input TypeStandard
Gate Charge183nC
Td (on/off) @ 25°C38ns/156ns
Test Condition400V, 55A, 2Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264 (IXXK)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

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Input Type

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Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

520W

Switching Energy

280µJ (on), 1.1mJ (off)

Input Type

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Gate Charge

310nC

Td (on/off) @ 25°C

39ns/200ns

Test Condition

480V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IXGH6N170A

IXYS

Manufacturer

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Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

6A

Current - Collector Pulsed (Icm)

14A

Vce(on) (Max) @ Vge, Ic

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Power - Max

75W

Switching Energy

590µJ (on), 180µJ (off)

Input Type

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Gate Charge

18.5nC

Td (on/off) @ 25°C

46ns/220ns

Test Condition

850V, 6A, 33Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

112A

Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

1.15mJ

Input Type

Standard

Gate Charge

141nC

Td (on/off) @ 25°C

20ns/250ns

Test Condition

400V, 30A, 11Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

300W

Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

Standard

Gate Charge

87nC

Td (on/off) @ 25°C

16ns/127ns

Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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