Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

JAN2N6898

JAN2N6898

For Reference Only

Part Number JAN2N6898
PNEDA Part # JAN2N6898
Description MOSFET P-CHANNEL 100V 25A TO3
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JAN2N6898 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJAN2N6898
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • JAN2N6898 Datasheet
  • where to find JAN2N6898
  • Microsemi

  • Microsemi JAN2N6898
  • JAN2N6898 PDF Datasheet
  • JAN2N6898 Stock

  • JAN2N6898 Pinout
  • Datasheet JAN2N6898
  • JAN2N6898 Supplier

  • Microsemi Distributor
  • JAN2N6898 Price
  • JAN2N6898 Distributor

JAN2N6898 Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 15.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-204AA, TO-3

The Products You May Be Interested In

NTMFS4C10NBT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16.4A (Ta), 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.95mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

987pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.51W (Ta), 23.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IPN80R900P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 500V

FET Feature

-

Power Dissipation (Max)

7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

TO-261-3

IXTH88N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6300pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

MMSF3P02HDR2SG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 16V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMN62D0U-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

2Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

32pF @ 30V

FET Feature

-

Power Dissipation (Max)

380mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

MBR130LSFT1G

MBR130LSFT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD123L

AUIRF1010ZS

AUIRF1010ZS

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

GSOT05C-E3-08

GSOT05C-E3-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 16V SOT23-3

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC

0451004.MR

0451004.MR

Littelfuse

FUSE BRD MNT 4A 125VAC/VDC 2SMD

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

EVQ-Q2K03W

EVQ-Q2K03W

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

USB2514BI-AEZG

USB2514BI-AEZG

Microchip Technology

IC CONTROLLER USB 36QFN

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

FDN337N

FDN337N

ON Semiconductor

MOSFET N-CH 30V 2.2A SSOT3

MT25QL512ABB8ESF-0SIT

MT25QL512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOP2