MBRM120ET1G
For Reference Only
| Part Number | MBRM120ET1G |
| PNEDA Part # | MBRM120ET1G |
| Description | DIODE SCHOTTKY 20V 1A POWERMITE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 116,730 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRM120ET1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRM120ET1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MBRM120ET1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 20V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 530mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 20V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-216AA |
| Supplier Device Package | Powermite |
| Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 500mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 400µA @ 20V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
