MBRTA600150R
For Reference Only
| Part Number | MBRTA600150R |
| PNEDA Part # | MBRTA600150R |
| Description | DIODE SCHOTTKY 150V 300A 3TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,394 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRTA600150R Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRTA600150R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MBRTA600150R Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) (per Diode) | 300A |
| Voltage - Forward (Vf) (Max) @ If | 880mV @ 300A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 4mA @ 150V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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Manufacturer ON Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) (per Diode) 30A Voltage - Forward (Vf) (Max) @ If 1.5V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 55ns Current - Reverse Leakage @ Vr 100µA @ 300V Operating Temperature - Junction -65°C ~ 150°C Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer Global Power Technologies Group Series - Diode Configuration 2 Independent Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) 30A Voltage - Forward (Vf) (Max) @ If 1.7V @ 30A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 1200V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Chassis Mount Package / Case SOT-227-4, miniBLOC Supplier Device Package SOT-227 |
Manufacturer Vishay Semiconductor Diodes Division Series TMBS® Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 800mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 100V Operating Temperature - Junction -65°C ~ 150°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 15A Voltage - Forward (Vf) (Max) @ If 570mV @ 7.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 35V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |
