MCP87090T-U/LC
For Reference Only
| Part Number | MCP87090T-U/LC |
| PNEDA Part # | MCP87090T-U-LC |
| Description | MOSFET N-CH 25V 8PDFN |
| Manufacturer | Microchip Technology |
| Unit Price | Request a Quote |
| In Stock | 4,734 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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MCP87090T-U/LC Resources
| Brand | Microchip Technology |
| ECAD Module |
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| Mfr. Part Number | MCP87090T-U/LC |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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MCP87090T-U/LC Specifications
| Manufacturer | Microchip Technology |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10V |
| Vgs(th) (Max) @ Id | 1.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PDFN (3x3) |
| Package / Case | 8-PowerTDFN |
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Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.7mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7540pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP (5.5x6.0) Package / Case 8-SOIC (0.173", 4.40mm Width) |
