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MRF555GT

MRF555GT

For Reference Only

Part Number MRF555GT
PNEDA Part # MRF555GT
Description RF TRANS NPN 16V 470MHZ
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MRF555GT Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMRF555GT
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MRF555GT Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)16V
Frequency - Transition470MHz
Noise Figure (dB Typ @ f)-
Gain12.5dB
Power - Max3W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 5V
Current - Collector (Ic) (Max)500mA
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Frequency - Transition

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Supplier Device Package

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

10.5GHz

Noise Figure (dB Typ @ f)

1.3dB @ 1.8GHz

Gain

8.5dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 30mA, 8V

Current - Collector (Ic) (Max)

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Operating Temperature

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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