MRF581
For Reference Only
| Part Number | MRF581 |
| PNEDA Part # | MRF581 |
| Description | RF TRANS NPN 18V 5GHZ MICRO X |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 22,507 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 31 - Jun 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF581 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF581 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MRF581 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Micro-X ceramic (84C) |
| Supplier Device Package | Micro-X ceramic (84C) |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 6GHz Noise Figure (dB Typ @ f) 3.5dB @ 1GHz Gain 10dB Power - Max 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA, 5V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.5GHz Noise Figure (dB Typ @ f) - Gain 14dB ~ 26dB Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer Maxim Integrated Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1GHz Noise Figure (dB Typ @ f) 3.3dB @ 836MHz Gain 11.6dB Power - Max 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 250mA, 3V Current - Collector (Ic) (Max) 1.2A Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package 8-SOIC-EP |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.4GHz Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz Gain - Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 1V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
