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MRF5812MR2

MRF5812MR2

For Reference Only

Part Number MRF5812MR2
PNEDA Part # MRF5812MR2
Description TRANS NPN 15V 200MA
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MRF5812MR2 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMRF5812MR2
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MRF5812MR2 Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

3.3V

Frequency - Transition

15GHz

Noise Figure (dB Typ @ f)

1.2dB @ 2GHz

Gain

14dB

Power - Max

190mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 2V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

SOT-343F

BFP460E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

5.8V

Frequency - Transition

22GHz

Noise Figure (dB Typ @ f)

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

Gain

12.5dB ~ 26.5dB

Power - Max

230mW

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 20mA, 3V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

PG-SOT343-4

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

1.5dB ~ 2dB @ 500MHz ~ 1GHz

Gain

8.3dB

Power - Max

2W

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 50mA, 10V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

2.8V

Frequency - Transition

25GHz

Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

-

Power - Max

234mW

DC Current Gain (hFE) (Min) @ Ic, Vce

235 @ 10mA, 2V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

4-DFP

KSC2786YBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

20V

Frequency - Transition

600MHz

Noise Figure (dB Typ @ f)

3dB ~ 5dB @ 100MHz

Gain

18dB ~ 22dB

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1mA, 6V

Current - Collector (Ic) (Max)

20mA

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Short Body

Supplier Device Package

TO-92S

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