MT29E512G08CEHBBJ4-3ES:B TR
For Reference Only
| Part Number | MT29E512G08CEHBBJ4-3ES:B TR |
| PNEDA Part # | MT29E512G08CEHBBJ4-3ES-B-TR |
| Description | IC FLASH 512G PARALLEL 333MHZ |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 4,428 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29E512G08CEHBBJ4-3ES:B TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29E512G08CEHBBJ4-3ES:B TR |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MT29E512G08CEHBBJ4-3ES:B TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 512Gb (64G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 333MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.5V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | - |
| Supplier Device Package | 132-VBGA (12x18) |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Synchronous Memory Size 1Mb (64K x 16) Memory Interface Parallel Clock Frequency 83MHz Write Cycle Time - Word, Page - Access Time 7.5ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x14) |
