MT3S111TU,LF
For Reference Only
| Part Number | MT3S111TU,LF |
| PNEDA Part # | MT3S111TU-LF |
| Description | RF SIGE NPN BIPOLAR TRANSISTOR N |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 4,734 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 11 - Jun 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT3S111TU Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | MT3S111TU,LF |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
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Logistics Mode
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MT3S111TU Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Gain | 12.5dB |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | UFM |
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