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MUN5132DW1T1G

MUN5132DW1T1G

For Reference Only

Part Number MUN5132DW1T1G
PNEDA Part # MUN5132DW1T1G
Description TRANS 2PNP PREBIAS 0.25W SC88
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5132DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5132DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5132DW1T1G, MUN5132DW1T1G Datasheet (Total Pages: 8, Size: 123.74 KB)
PDFNSBA143EDXV6T1G Datasheet Cover
NSBA143EDXV6T1G Datasheet Page 2 NSBA143EDXV6T1G Datasheet Page 3 NSBA143EDXV6T1G Datasheet Page 4 NSBA143EDXV6T1G Datasheet Page 5 NSBA143EDXV6T1G Datasheet Page 6 NSBA143EDXV6T1G Datasheet Page 7 NSBA143EDXV6T1G Datasheet Page 8

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MUN5132DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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