Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MUN5230DW1T1G

MUN5230DW1T1G

For Reference Only

Part Number MUN5230DW1T1G
PNEDA Part # MUN5230DW1T1G
Description TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 207,198
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5230DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5230DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5230DW1T1G, MUN5230DW1T1G Datasheet (Total Pages: 6, Size: 139.41 KB)
PDFNSBC113EDXV6T1G Datasheet Cover
NSBC113EDXV6T1G Datasheet Page 2 NSBC113EDXV6T1G Datasheet Page 3 NSBC113EDXV6T1G Datasheet Page 4 NSBC113EDXV6T1G Datasheet Page 5 NSBC113EDXV6T1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MUN5230DW1T1G Datasheet
  • where to find MUN5230DW1T1G
  • ON Semiconductor

  • ON Semiconductor MUN5230DW1T1G
  • MUN5230DW1T1G PDF Datasheet
  • MUN5230DW1T1G Stock

  • MUN5230DW1T1G Pinout
  • Datasheet MUN5230DW1T1G
  • MUN5230DW1T1G Supplier

  • ON Semiconductor Distributor
  • MUN5230DW1T1G Price
  • MUN5230DW1T1G Distributor

MUN5230DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1kOhms
Resistor - Emitter Base (R2)1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

The Products You May Be Interested In

NSVMUN5113DW1T3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 1V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

BCR 133S H6444

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

130MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

PUMF12,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V, 40V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V / 120 @ 1mA, 6V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

100MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

RN1964TE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

DDC122TU-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

220Ohms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

Recently Sold

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

ATMEGA328P-15AZ

ATMEGA328P-15AZ

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

BAS516,115

BAS516,115

Nexperia

DIODE GEN PURP 100V 250MA SOD523

MC33174DR2G

MC33174DR2G

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14SOIC

MP5505AGL-Z

MP5505AGL-Z

Monolithic Power Systems Inc.

IC REG BOOST 7V 4A

7443320068

7443320068

Wurth Electronics

FIXED IND 680NH 26A 0.72 MOHM

BF862,215

BF862,215

NXP

JFET N-CH 20V 25MA SOT23

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

NC7WZ07P6X

NC7WZ07P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

IPA60R360P7SXKSA1

IPA60R360P7SXKSA1

Infineon Technologies

MOSFET N-CHANNEL 600V 9A TO220

MAX8216ESD+

MAX8216ESD+

Maxim Integrated

IC MONITOR VOLT MPU 14-SOIC