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MUN5232DW1T1G

MUN5232DW1T1G

For Reference Only

Part Number MUN5232DW1T1G
PNEDA Part # MUN5232DW1T1G
Description TRANS 2NPN PREBIAS 0.25W SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 139,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 7 - Jun 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5232DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5232DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5232DW1T1G, MUN5232DW1T1G Datasheet (Total Pages: 8, Size: 151.67 KB)
PDFNSBC143EDXV6T1G Datasheet Cover
NSBC143EDXV6T1G Datasheet Page 2 NSBC143EDXV6T1G Datasheet Page 3 NSBC143EDXV6T1G Datasheet Page 4 NSBC143EDXV6T1G Datasheet Page 5 NSBC143EDXV6T1G Datasheet Page 6 NSBC143EDXV6T1G Datasheet Page 7 NSBC143EDXV6T1G Datasheet Page 8

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MUN5232DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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ON Semiconductor

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Mounting Type

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Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

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Manufacturer

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Series

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Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Supplier Device Package

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Mounting Type

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Package / Case

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Supplier Device Package

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Panasonic Electronic Components

Manufacturer

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Series

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Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

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Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Frequency - Transition

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Power - Max

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