NDP4060
For Reference Only
| Part Number | NDP4060 |
| PNEDA Part # | NDP4060 |
| Description | MOSFET N-CH 60V 15A TO-220 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,106 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NDP4060 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NDP4060 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NDP4060 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4352pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Panasonic Electronic Components Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V Rds On (Max) @ Id, Vgs 50Ohm @ 10mA, 2.5V Vgs(th) (Max) @ Id 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) 10V Input Capacitance (Ciss) (Max) @ Vds 4.5pF @ 5V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Mini3-G1 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 1.2A (Ta), 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 830mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 33W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (3x3) Package / Case 8-PowerVDFN |
