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NE67739-A

NE67739-A

For Reference Only

Part Number NE67739-A
PNEDA Part # NE67739-A
Description RF TRANS NPN 6V 14.5GHZ SOT143
Manufacturer CEL
Unit Price Request a Quote
In Stock 6,840
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE67739-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE67739-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE67739-A, NE67739-A Datasheet (Total Pages: 9, Size: 3,180.88 KB)
PDFNE67739-A Datasheet Cover
NE67739-A Datasheet Page 2 NE67739-A Datasheet Page 3 NE67739-A Datasheet Page 4 NE67739-A Datasheet Page 5 NE67739-A Datasheet Page 6 NE67739-A Datasheet Page 7 NE67739-A Datasheet Page 8 NE67739-A Datasheet Page 9

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NE67739-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition14.5GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Gain12dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 20mA, 3V
Current - Collector (Ic) (Max)50mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device Package-

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

Gain

20dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 25mA, 2V

Current - Collector (Ic) (Max)

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Operating Temperature

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Ampleon

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

200°C (TJ)

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Supplier Device Package

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

11GHz

Noise Figure (dB Typ @ f)

1.1dB @ 1.8GHz

Gain

16.5dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 8V

Current - Collector (Ic) (Max)

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Operating Temperature

-40°C ~ 150°C (TJ)

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Supplier Device Package

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UMIL3B

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Microsemi

Manufacturer

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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