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NE68030-T1-A

NE68030-T1-A

For Reference Only

Part Number NE68030-T1-A
PNEDA Part # NE68030-T1-A
Description RF TRANS NPN 10V 10GHZ SOT323
Manufacturer CEL
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE68030-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE68030-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE68030-T1-A, NE68030-T1-A Datasheet (Total Pages: 19, Size: 901.45 KB)
PDFNE68030-T1-R45-A Datasheet Cover
NE68030-T1-R45-A Datasheet Page 2 NE68030-T1-R45-A Datasheet Page 3 NE68030-T1-R45-A Datasheet Page 4 NE68030-T1-R45-A Datasheet Page 5 NE68030-T1-R45-A Datasheet Page 6 NE68030-T1-R45-A Datasheet Page 7 NE68030-T1-R45-A Datasheet Page 8 NE68030-T1-R45-A Datasheet Page 9 NE68030-T1-R45-A Datasheet Page 10 NE68030-T1-R45-A Datasheet Page 11

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NE68030-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.9dB @ 2GHz
Gain9.4dB
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 3V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

14.5GHz

Noise Figure (dB Typ @ f)

1.5dB @ 2GHz

Gain

12dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 20mA, 3V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-253-4, TO-253AA

Supplier Device Package

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UTV080

Microsemi

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

470MHz ~ 860MHz

Noise Figure (dB Typ @ f)

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Gain

9dB ~ 10dB

Power - Max

65W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 500mA, 5V

Current - Collector (Ic) (Max)

2.5A

Operating Temperature

200°C (TJ)

Mounting Type

Channel, DIN Rail Mount

Package / Case

55JV

Supplier Device Package

55JV

1002MP

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

50V

Frequency - Transition

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f)

-

Gain

8.24dB ~ 11dB

Power - Max

7W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 100mA, 5V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

55FW-1

Supplier Device Package

55FW-1

MRF8372

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

16V

Frequency - Transition

870MHz

Noise Figure (dB Typ @ f)

-

Gain

8dB ~ 9.5dB

Power - Max

2.2W

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 50mA, 5V

Current - Collector (Ic) (Max)

200mA

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6.5GHz

Noise Figure (dB Typ @ f)

1.1dB @ 1GHz

Gain

9dB

Power - Max

1.2W

DC Current Gain (hFE) (Min) @ Ic, Vce

125 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89

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