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NE85633-R25-A

NE85633-R25-A

For Reference Only

Part Number NE85633-R25-A
PNEDA Part # NE85633-R25-A
Description RF TRANS NPN 12V 7GHZ SOT23
Manufacturer CEL
Unit Price Request a Quote
In Stock 6,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE85633-R25-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE85633-R25-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE85633-R25-A, NE85633-R25-A Datasheet (Total Pages: 9, Size: 2,238.37 KB)
PDF2SC3356-T1B-R25-A Datasheet Cover
2SC3356-T1B-R25-A Datasheet Page 2 2SC3356-T1B-R25-A Datasheet Page 3 2SC3356-T1B-R25-A Datasheet Page 4 2SC3356-T1B-R25-A Datasheet Page 5 2SC3356-T1B-R25-A Datasheet Page 6 2SC3356-T1B-R25-A Datasheet Page 7 2SC3356-T1B-R25-A Datasheet Page 8 2SC3356-T1B-R25-A Datasheet Page 9

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NE85633-R25-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Gain11.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

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Noise Figure (dB Typ @ f)

2dB @ 1GHz

Gain

7.2dB

Power - Max

2W

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 50mA, 10V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

SOT-89

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 50mA, 5V

Current - Collector (Ic) (Max)

200mA

Operating Temperature

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Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

64030

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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SS9018HBU

ON Semiconductor

Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

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