NGTB10N60R2DT4G
For Reference Only
| Part Number | NGTB10N60R2DT4G |
| PNEDA Part # | NGTB10N60R2DT4G |
| Description | IGBT 10A 600V DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,562 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 31 - Jun 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NGTB10N60R2DT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NGTB10N60R2DT4G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NGTB10N60R2DT4G Datasheet
- where to find NGTB10N60R2DT4G
- ON Semiconductor
- ON Semiconductor NGTB10N60R2DT4G
- NGTB10N60R2DT4G PDF Datasheet
- NGTB10N60R2DT4G Stock
- NGTB10N60R2DT4G Pinout
- Datasheet NGTB10N60R2DT4G
- NGTB10N60R2DT4G Supplier
- ON Semiconductor Distributor
- NGTB10N60R2DT4G Price
- NGTB10N60R2DT4G Distributor
NGTB10N60R2DT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 20A |
| Current - Collector Pulsed (Icm) | 40A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Power - Max | 72W |
| Switching Energy | 412µJ (on), 140µJ (off) |
| Input Type | Standard |
| Gate Charge | 53nC |
| Td (on/off) @ 25°C | 48ns/120ns |
| Test Condition | 300V, 10A, 30Ohm, 15V |
| Reverse Recovery Time (trr) | 90ns |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
The Products You May Be Interested In
|
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 165A Current - Collector Pulsed (Icm) 360A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 80A Power - Max 830W Switching Energy 4.3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 145nC Td (on/off) @ 25°C 34ns/90ns Test Condition 450V, 80A, 2Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
Manufacturer Renesas Electronics America Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 17A Power - Max 113W Switching Energy 90µJ (on), 300µJ (off) Input Type Standard Gate Charge 60nC Td (on/off) @ 25°C 40ns/90ns Test Condition 300V, 17A, 5Ohm, 15V Reverse Recovery Time (trr) 25ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-83 Supplier Device Package 4-LDPAK |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A Power - Max 101W Switching Energy 29µJ (on), 200µJ (off) Input Type Standard Gate Charge 32nC Td (on/off) @ 25°C 27ns/79ns Test Condition 400V, 10A, 22Ohm, 15V Reverse Recovery Time (trr) 62ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D²PAK |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 21A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A Power - Max 56W Switching Energy 20µJ (on), 68µJ (off) Input Type Standard Gate Charge 13.6nC Td (on/off) @ 25°C 12ns/76ns Test Condition 390V, 3A, 10Ohm, 15V Reverse Recovery Time (trr) 21ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 25A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A Power - Max 80W Switching Energy 95µJ (on), 115µJ (off) Input Type Standard Gate Charge 35nC Td (on/off) @ 25°C 18.5ns/72ns Test Condition 390V, 7A, 10Ohm, 15V Reverse Recovery Time (trr) 37ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
