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NGTB15N120IHRWG

NGTB15N120IHRWG

For Reference Only

Part Number NGTB15N120IHRWG
PNEDA Part # NGTB15N120IHRWG
Description IGBT 1200V 15A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB15N120IHRWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB15N120IHRWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB15N120IHRWG, NGTB15N120IHRWG Datasheet (Total Pages: 10, Size: 170.56 KB)
PDFNGTB15N120IHRWG Datasheet Cover
NGTB15N120IHRWG Datasheet Page 2 NGTB15N120IHRWG Datasheet Page 3 NGTB15N120IHRWG Datasheet Page 4 NGTB15N120IHRWG Datasheet Page 5 NGTB15N120IHRWG Datasheet Page 6 NGTB15N120IHRWG Datasheet Page 7 NGTB15N120IHRWG Datasheet Page 8 NGTB15N120IHRWG Datasheet Page 9 NGTB15N120IHRWG Datasheet Page 10

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NGTB15N120IHRWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
Power - Max333W
Switching Energy340µJ (off)
Input TypeStandard
Gate Charge160nC
Td (on/off) @ 25°C-/170ns
Test Condition600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Package / Case

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

76A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

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Power - Max

268W

Switching Energy

390µJ (on), 632µJ (off)

Input Type

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Gate Charge

104nC

Td (on/off) @ 25°C

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Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

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Power - Max

395W

Switching Energy

880µJ (on), 520µJ (off)

Input Type

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Gate Charge

166nC

Td (on/off) @ 25°C

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Test Condition

400V, 37.5A, 27Ohm, 15V

Reverse Recovery Time (trr)

59ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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