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NGTB60N65FL2WG

NGTB60N65FL2WG

For Reference Only

Part Number NGTB60N65FL2WG
PNEDA Part # NGTB60N65FL2WG
Description 650V/60A IGBT FSII
Manufacturer ON Semiconductor
Unit Price
1 ---------- $83.6412
50 ---------- $79.7205
100 ---------- $75.7999
200 ---------- $71.8792
400 ---------- $68.6119
500 ---------- $65.3447
In Stock 5,533
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB60N65FL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB60N65FL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB60N65FL2WG, NGTB60N65FL2WG Datasheet (Total Pages: 8, Size: 103.21 KB)
PDFNGTB60N65FL2WG Datasheet Cover
NGTB60N65FL2WG Datasheet Page 2 NGTB60N65FL2WG Datasheet Page 3 NGTB60N65FL2WG Datasheet Page 4 NGTB60N65FL2WG Datasheet Page 5 NGTB60N65FL2WG Datasheet Page 6 NGTB60N65FL2WG Datasheet Page 7 NGTB60N65FL2WG Datasheet Page 8

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NGTB60N65FL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)240A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 60A
Power - Max595W
Switching Energy1.59mJ (on), 660µJ (off)
Input TypeStandard
Gate Charge318nC
Td (on/off) @ 25°C117ns/265ns
Test Condition400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)96ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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