NP90N04VUG-E1-AY
For Reference Only
| Part Number | NP90N04VUG-E1-AY |
| PNEDA Part # | NP90N04VUG-E1-AY |
| Description | MOSFET N-CH TO-252 |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 8,928 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NP90N04VUG-E1-AY Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | NP90N04VUG-E1-AY |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NP90N04VUG-E1-AY Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 140mOhm @ 24A, 10V Vgs(th) (Max) @ Id 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7020pF @ 25V FET Feature - Power Dissipation (Max) 1000W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 50mOhm @ 12A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
