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NTB13N10G

NTB13N10G

For Reference Only

Part Number NTB13N10G
PNEDA Part # NTB13N10G
Description MOSFET N-CH 100V 13A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTB13N10G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTB13N10G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTB13N10G, NTB13N10G Datasheet (Total Pages: 8, Size: 77.4 KB)
PDFNTB13N10G Datasheet Cover
NTB13N10G Datasheet Page 2 NTB13N10G Datasheet Page 3 NTB13N10G Datasheet Page 4 NTB13N10G Datasheet Page 5 NTB13N10G Datasheet Page 6 NTB13N10G Datasheet Page 7 NTB13N10G Datasheet Page 8

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NTB13N10G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
FET Feature-
Power Dissipation (Max)64.7W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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