Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD4863N-35G

NTD4863N-35G

For Reference Only

Part Number NTD4863N-35G
PNEDA Part # NTD4863N-35G
Description MOSFET N-CH 25V 9.2A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4863N-35G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4863N-35G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4863N-35G, NTD4863N-35G Datasheet (Total Pages: 8, Size: 118.43 KB)
PDFNTD4863NA-35G Datasheet Cover
NTD4863NA-35G Datasheet Page 2 NTD4863NA-35G Datasheet Page 3 NTD4863NA-35G Datasheet Page 4 NTD4863NA-35G Datasheet Page 5 NTD4863NA-35G Datasheet Page 6 NTD4863NA-35G Datasheet Page 7 NTD4863NA-35G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD4863N-35G Datasheet
  • where to find NTD4863N-35G
  • ON Semiconductor

  • ON Semiconductor NTD4863N-35G
  • NTD4863N-35G PDF Datasheet
  • NTD4863N-35G Stock

  • NTD4863N-35G Pinout
  • Datasheet NTD4863N-35G
  • NTD4863N-35G Supplier

  • ON Semiconductor Distributor
  • NTD4863N-35G Price
  • NTD4863N-35G Distributor

NTD4863N-35G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds990pF @ 12V
FET Feature-
Power Dissipation (Max)1.27W (Ta), 36.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak

The Products You May Be Interested In

NX3008PBKMB,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4.1Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.72nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

46pF @ 15V

FET Feature

-

Power Dissipation (Max)

360mW (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

IRL3803SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CPH3351-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3

TSM8N80CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1921pF @ 25V

FET Feature

-

Power Dissipation (Max)

40.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

DMN4015LK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2072pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.19W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

MAX3218EAP+

MAX3218EAP+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

MC34844AEPR2

MC34844AEPR2

NXP

IC LED DRVR RGLTR DIM 80MA 32QFN

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

A700X157M010ATE015

A700X157M010ATE015

KEMET

CAP ALUM POLY 150UF 20% 10V SMD

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

PCF8593P,112

PCF8593P,112

NXP

IC RTC CLK/CALENDAR I2C 8-DIP

DLP11SN900HL2L

DLP11SN900HL2L

Murata

CMC 150MA 2LN 90 OHM SMD

ATTINY841-SSU

ATTINY841-SSU

Microchip Technology

IC MCU 8BIT 8KB FLASH 14SOIC

SI8540-B-FWR

SI8540-B-FWR

Silicon Labs

IC CURR SENSE 1 CIRCUIT SOT23-5