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NTD6416ANL-1G

NTD6416ANL-1G

For Reference Only

Part Number NTD6416ANL-1G
PNEDA Part # NTD6416ANL-1G
Description MOSFET N-CH 100V 19A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,752
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD6416ANL-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD6416ANL-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD6416ANL-1G, NTD6416ANL-1G Datasheet (Total Pages: 7, Size: 131.11 KB)
PDFNVD6416ANLT4G Datasheet Cover
NVD6416ANLT4G Datasheet Page 2 NVD6416ANLT4G Datasheet Page 3 NVD6416ANLT4G Datasheet Page 4 NVD6416ANLT4G Datasheet Page 5 NVD6416ANLT4G Datasheet Page 6 NVD6416ANLT4G Datasheet Page 7

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NTD6416ANL-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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