Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMFS4C10NT1G-001

NTMFS4C10NT1G-001

For Reference Only

Part Number NTMFS4C10NT1G-001
PNEDA Part # NTMFS4C10NT1G-001
Description MOSFET N-CH 30V 8.2A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,582
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4C10NT1G-001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4C10NT1G-001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4C10NT1G-001, NTMFS4C10NT1G-001 Datasheet (Total Pages: 7, Size: 135.28 KB)
PDFNTMFS4C10NT1G-001 Datasheet Cover
NTMFS4C10NT1G-001 Datasheet Page 2 NTMFS4C10NT1G-001 Datasheet Page 3 NTMFS4C10NT1G-001 Datasheet Page 4 NTMFS4C10NT1G-001 Datasheet Page 5 NTMFS4C10NT1G-001 Datasheet Page 6 NTMFS4C10NT1G-001 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMFS4C10NT1G-001 Datasheet
  • where to find NTMFS4C10NT1G-001
  • ON Semiconductor

  • ON Semiconductor NTMFS4C10NT1G-001
  • NTMFS4C10NT1G-001 PDF Datasheet
  • NTMFS4C10NT1G-001 Stock

  • NTMFS4C10NT1G-001 Pinout
  • Datasheet NTMFS4C10NT1G-001
  • NTMFS4C10NT1G-001 Supplier

  • ON Semiconductor Distributor
  • NTMFS4C10NT1G-001 Price
  • NTMFS4C10NT1G-001 Distributor

NTMFS4C10NT1G-001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds987pF @ 15V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

The Products You May Be Interested In

BSC014NE2LSIATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

33A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 12V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-7

Package / Case

8-PowerTDFN

FQA30N40

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

IPI80N06S4L05AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

8180pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPS090N03LGBKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 15V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak

FQD12N20TM_F080

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 55W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

E-TEA3717DP

E-TEA3717DP

STMicroelectronics

IC MOTOR DRVR BIPOLAR 16POWERDIP

SP0506BAATG

SP0506BAATG

Littelfuse

TVS DIODE 5.5V 8.5V 8MSOP

AT45DB161D-SU

AT45DB161D-SU

Adesto Technologies

IC FLASH 16M SPI 66MHZ 8SOIC

EC3SA-12S15N

EC3SA-12S15N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

MCP23017-E/SO

MCP23017-E/SO

Microchip Technology

IC I/O EXPANDER I2C 16B 28SOIC

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

T520V337M2R5ATE009

T520V337M2R5ATE009

KEMET

CAP TANT POLY 330UF 2.5V 2917

CAT28C64BLI90

CAT28C64BLI90

ON Semiconductor

IC EEPROM 64K PARALLEL 28DIP

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

HLMP-2655

HLMP-2655

Broadcom

LED LT BAR 8.89X8.89MM SGL HER

NC7SZ04P5X

NC7SZ04P5X

ON Semiconductor

IC INVERTER 1CH 1-INP SC70-5

PIC16F1829T-I/SS

PIC16F1829T-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 20SSOP