Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTP190N65S3HF

NTP190N65S3HF

For Reference Only

Part Number NTP190N65S3HF
PNEDA Part # NTP190N65S3HF
Description SUPERFET3 650V FRFET,190M
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTP190N65S3HF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTP190N65S3HF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTP190N65S3HF, NTP190N65S3HF Datasheet (Total Pages: 10, Size: 439.67 KB)
PDFNTP190N65S3HF Datasheet Cover
NTP190N65S3HF Datasheet Page 2 NTP190N65S3HF Datasheet Page 3 NTP190N65S3HF Datasheet Page 4 NTP190N65S3HF Datasheet Page 5 NTP190N65S3HF Datasheet Page 6 NTP190N65S3HF Datasheet Page 7 NTP190N65S3HF Datasheet Page 8 NTP190N65S3HF Datasheet Page 9 NTP190N65S3HF Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTP190N65S3HF Datasheet
  • where to find NTP190N65S3HF
  • ON Semiconductor

  • ON Semiconductor NTP190N65S3HF
  • NTP190N65S3HF PDF Datasheet
  • NTP190N65S3HF Stock

  • NTP190N65S3HF Pinout
  • Datasheet NTP190N65S3HF
  • NTP190N65S3HF Supplier

  • ON Semiconductor Distributor
  • NTP190N65S3HF Price
  • NTP190N65S3HF Distributor

NTP190N65S3HF Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 400V
FET Feature-
Power Dissipation (Max)162W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

The Products You May Be Interested In

IPU60R2K1CEBKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

-

Power Dissipation (Max)

22W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI1079X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.44A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 15V

FET Feature

-

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

FDD86102LZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

22.5mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1540pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 54W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPP100N06S3-04

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

314nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14230pF @ 25V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

CPH6354-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-CPH

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

SSC54-E3/57T

SSC54-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

74HCT14D,653

74HCT14D,653

Nexperia

IC INVERTER SCHMITT 6CH 14SO

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

SMBJ16A

SMBJ16A

Taiwan Semiconductor Corporation

TVS DIODE 16V 26V DO214AA

V7-7B17D8-201

V7-7B17D8-201

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 11A 125V

LTC4300A-1CMS8#PBF

LTC4300A-1CMS8#PBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

ADM3252EABCZ

ADM3252EABCZ

Analog Devices

DGTL ISO 2.5KV 4CH RS232 44BGA

BSS138BK,215

BSS138BK,215

Nexperia

MOSFET N-CH 60V TO-236AB

AD5447YRUZ

AD5447YRUZ

Analog Devices

IC DAC 12BIT A-OUT 24TSSOP

2920L150DR

2920L150DR

Littelfuse

PTC RESET FUSE 33V 1.5A 2920

TAJB106K016RNJ

TAJB106K016RNJ

CAP TANT 10UF 10% 16V 1411