NVMFS6B05NT1G
For Reference Only
| Part Number | NVMFS6B05NT1G |
| PNEDA Part # | NVMFS6B05NT1G |
| Description | MOSFET N-CH 100V 104A SO8FL |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,590 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVMFS6B05NT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVMFS6B05NT1G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NVMFS6B05NT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 165W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V FET Feature - Power Dissipation (Max) 1.36W (Ta), 60W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 685pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
