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PHD23NQ10T,118

PHD23NQ10T,118

For Reference Only

Part Number PHD23NQ10T,118
PNEDA Part # PHD23NQ10T-118
Description MOSFET N-CH 100V 23A DPAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHD23NQ10T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHD23NQ10T,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHD23NQ10T, PHD23NQ10T Datasheet (Total Pages: 12, Size: 102.16 KB)
PDFPHD23NQ10T Datasheet Cover
PHD23NQ10T Datasheet Page 2 PHD23NQ10T Datasheet Page 3 PHD23NQ10T Datasheet Page 4 PHD23NQ10T Datasheet Page 5 PHD23NQ10T Datasheet Page 6 PHD23NQ10T Datasheet Page 7 PHD23NQ10T Datasheet Page 8 PHD23NQ10T Datasheet Page 9 PHD23NQ10T Datasheet Page 10 PHD23NQ10T Datasheet Page 11

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PHD23NQ10T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1187pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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