PMFPB6532UP,115
For Reference Only
| Part Number | PMFPB6532UP,115 |
| PNEDA Part # | PMFPB6532UP-115 |
| Description | MOSFET P-CH 20V 3.5A SOT1118 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 4,572 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 11 - Jun 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PMFPB6532UP Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | PMFPB6532UP,115 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
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PMFPB6532UP Specifications
| Manufacturer | NXP USA Inc. |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 520mW (Ta), 8.3W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2020-6 |
| Package / Case | 6-UDFN Exposed Pad |
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