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PSMN8R5-100ESQ

PSMN8R5-100ESQ

For Reference Only

Part Number PSMN8R5-100ESQ
PNEDA Part # PSMN8R5-100ESQ
Description MOSFET N-CH 100V 100A I2PAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 53,838
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN8R5-100ESQ Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN8R5-100ESQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN8R5-100ESQ, PSMN8R5-100ESQ Datasheet (Total Pages: 14, Size: 729.03 KB)
PDFPSMN8R5-100ESQ Datasheet Cover
PSMN8R5-100ESQ Datasheet Page 2 PSMN8R5-100ESQ Datasheet Page 3 PSMN8R5-100ESQ Datasheet Page 4 PSMN8R5-100ESQ Datasheet Page 5 PSMN8R5-100ESQ Datasheet Page 6 PSMN8R5-100ESQ Datasheet Page 7 PSMN8R5-100ESQ Datasheet Page 8 PSMN8R5-100ESQ Datasheet Page 9 PSMN8R5-100ESQ Datasheet Page 10 PSMN8R5-100ESQ Datasheet Page 11

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PSMN8R5-100ESQ Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs111nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5512pF @ 50V
FET Feature-
Power Dissipation (Max)263W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Current - Continuous Drain (Id) @ 25°C

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Vgs(th) (Max) @ Id

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Vgs (Max)

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FET Feature

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Power Dissipation (Max)

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

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Operating Temperature

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Diodes Incorporated

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Series

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FET Type

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MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

750mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

460mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

64.3pF @ 25V

FET Feature

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Power Dissipation (Max)

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Operating Temperature

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.95A, 10V

Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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400mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

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Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

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FET Type

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Technology

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Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Package / Case

8-SOIC (0.154", 3.90mm Width)

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