R6030JNZ4C13
For Reference Only
| Part Number | R6030JNZ4C13 |
| PNEDA Part # | R6030JNZ4C13 |
| Description | R6030JNZ4 IS A POWER MOSFET WITH |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,688 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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R6030JNZ4C13 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | R6030JNZ4C13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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R6030JNZ4C13 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 143mOhm @ 15A, 15V |
| Vgs(th) (Max) @ Id | 7V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 15V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247G |
| Package / Case | TO-247-3 |
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