RGTH00TS65DGC11
For Reference Only
| Part Number | RGTH00TS65DGC11 |
| PNEDA Part # | RGTH00TS65DGC11 |
| Description | IGBT 650V 85A 277W TO-247N |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,400 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RGTH00TS65DGC11 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RGTH00TS65DGC11 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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RGTH00TS65DGC11 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 85A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 277W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 94nC |
| Td (on/off) @ 25°C | 39ns/143ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 54ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 31A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 17A Power - Max 100W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
