Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RHK005N03FRAT146

RHK005N03FRAT146

For Reference Only

Part Number RHK005N03FRAT146
PNEDA Part # RHK005N03FRAT146
Description 4V DRIVE NCH MOSFET (AEC-Q101 QU
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,700
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RHK005N03FRAT146 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRHK005N03FRAT146
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RHK005N03FRAT146 Datasheet
  • where to find RHK005N03FRAT146
  • Rohm Semiconductor

  • Rohm Semiconductor RHK005N03FRAT146
  • RHK005N03FRAT146 PDF Datasheet
  • RHK005N03FRAT146 Stock

  • RHK005N03FRAT146 Pinout
  • Datasheet RHK005N03FRAT146
  • RHK005N03FRAT146 Supplier

  • Rohm Semiconductor Distributor
  • RHK005N03FRAT146 Price
  • RHK005N03FRAT146 Distributor

RHK005N03FRAT146 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSMT3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

2000V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

646pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

BUK7575-100A,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1210pF @ 25V

FET Feature

-

Power Dissipation (Max)

99W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AO3422L_103

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

160mOhm @ 2.1A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.3nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

BSS83PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

330mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 330mA, 10V

Vgs(th) (Max) @ Id

2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

3.57nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

78pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

AUIRFSA8409-7P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

523A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.69mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

460nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13975pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Recently Sold

PIC16F1829T-I/SS

PIC16F1829T-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 20SSOP

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

DS9503P+

DS9503P+

Maxim Integrated

TVS DIODE 7.5V 6TSOC

744770122

744770122

Wurth Electronics

FIXED IND 22UH 4.1A 43 MOHM SMD

SFH655A-X009T

SFH655A-X009T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV DARL 4SMD

CD40106BCN

CD40106BCN

ON Semiconductor

IC INVERTER SCHMITT 6CH 14DIP

NPT1012B

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

FOD4108V

FOD4108V

ON Semiconductor

OPTOISOLATOR 5KV TRIAC 6DIP

TC4426AEOA

TC4426AEOA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

NCP708MU330TAG

NCP708MU330TAG

ON Semiconductor

IC REG LINEAR 3.3V 1A 6UDFN

SMBJ30CA-13-F

SMBJ30CA-13-F

Diodes Incorporated

TVS DIODE 30V 48.4V SMB

4610X-101-332LF

4610X-101-332LF

Bourns

RES ARRAY 9 RES 3.3K OHM 10SIP