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RJK60S7DPP-E0#T2

RJK60S7DPP-E0#T2

For Reference Only

Part Number RJK60S7DPP-E0#T2
PNEDA Part # RJK60S7DPP-E0-T2
Description MOSFET N-CH 600V 30A TO220FP
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK60S7DPP-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK60S7DPP-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK60S7DPP-E0#T2, RJK60S7DPP-E0#T2 Datasheet (Total Pages: 8, Size: 196.64 KB)
PDFRJK60S7DPP-E0#T2 Datasheet Cover
RJK60S7DPP-E0#T2 Datasheet Page 2 RJK60S7DPP-E0#T2 Datasheet Page 3 RJK60S7DPP-E0#T2 Datasheet Page 4 RJK60S7DPP-E0#T2 Datasheet Page 5 RJK60S7DPP-E0#T2 Datasheet Page 6 RJK60S7DPP-E0#T2 Datasheet Page 7 RJK60S7DPP-E0#T2 Datasheet Page 8

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RJK60S7DPP-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds2300pF @ 25V
FET FeatureSuper Junction
Power Dissipation (Max)34.7W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

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