RJP65T43DPQ-A0#T2
For Reference Only
| Part Number | RJP65T43DPQ-A0#T2 |
| PNEDA Part # | RJP65T43DPQ-A0-T2 |
| Description | IGBT TRENCH 650V 60A TO247A |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 4,176 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RJP65T43DPQ-A0#T2 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | RJP65T43DPQ-A0#T2 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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RJP65T43DPQ-A0#T2 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Power - Max | 150W |
| Switching Energy | 170µJ (on), 130µJ (off) |
| Input Type | Standard |
| Gate Charge | 69nC |
| Td (on/off) @ 25°C | 35ns/105ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247A |
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Manufacturer IXYS Series GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 230A Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 32A Power - Max 300W Switching Energy - Input Type Standard Gate Charge 89nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (IXGH) |
