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S8CJ-M3/I

S8CJ-M3/I

For Reference Only

Part Number S8CJ-M3/I
PNEDA Part # S8CJ-M3-I
Description DIODE GEN PURP 600V 8A DO214AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 32,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

S8CJ-M3/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberS8CJ-M3/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
S8CJ-M3/I, S8CJ-M3/I Datasheet (Total Pages: 4, Size: 96.21 KB)
PDFS8CMHM3/I Datasheet Cover
S8CMHM3/I Datasheet Page 2 S8CMHM3/I Datasheet Page 3 S8CMHM3/I Datasheet Page 4

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S8CJ-M3/I Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If985mV @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)4µs
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F79pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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