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SI1028X-T1-GE3

SI1028X-T1-GE3

For Reference Only

Part Number SI1028X-T1-GE3
PNEDA Part # SI1028X-T1-GE3
Description MOSFET 2N-CH 30V SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1028X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1028X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1028X-T1-GE3, SI1028X-T1-GE3 Datasheet (Total Pages: 8, Size: 178.42 KB)
PDFSI1028X-T1-GE3 Datasheet Cover
SI1028X-T1-GE3 Datasheet Page 2 SI1028X-T1-GE3 Datasheet Page 3 SI1028X-T1-GE3 Datasheet Page 4 SI1028X-T1-GE3 Datasheet Page 5 SI1028X-T1-GE3 Datasheet Page 6 SI1028X-T1-GE3 Datasheet Page 7 SI1028X-T1-GE3 Datasheet Page 8

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SI1028X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds16pF @ 15V
Power - Max220mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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