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SI1404BDH-T1-GE3

SI1404BDH-T1-GE3

For Reference Only

Part Number SI1404BDH-T1-GE3
PNEDA Part # SI1404BDH-T1-GE3
Description MOSFET N-CH 30V 1.9A SOT363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1404BDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1404BDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1404BDH-T1-GE3, SI1404BDH-T1-GE3 Datasheet (Total Pages: 7, Size: 105.35 KB)
PDFSI1404BDH-T1-E3 Datasheet Cover
SI1404BDH-T1-E3 Datasheet Page 2 SI1404BDH-T1-E3 Datasheet Page 3 SI1404BDH-T1-E3 Datasheet Page 4 SI1404BDH-T1-E3 Datasheet Page 5 SI1404BDH-T1-E3 Datasheet Page 6 SI1404BDH-T1-E3 Datasheet Page 7

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SI1404BDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta), 2.37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs238mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 15V
FET Feature-
Power Dissipation (Max)1.32W (Ta), 2.28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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