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SI1405DL-T1-E3

SI1405DL-T1-E3

For Reference Only

Part Number SI1405DL-T1-E3
PNEDA Part # SI1405DL-T1-E3
Description MOSFET P-CH 8V 1.6A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1405DL-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1405DL-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1405DL-T1-E3, SI1405DL-T1-E3 Datasheet (Total Pages: 9, Size: 249.6 KB)
PDFSI1405DL-T1-E3 Datasheet Cover
SI1405DL-T1-E3 Datasheet Page 2 SI1405DL-T1-E3 Datasheet Page 3 SI1405DL-T1-E3 Datasheet Page 4 SI1405DL-T1-E3 Datasheet Page 5 SI1405DL-T1-E3 Datasheet Page 6 SI1405DL-T1-E3 Datasheet Page 7 SI1405DL-T1-E3 Datasheet Page 8 SI1405DL-T1-E3 Datasheet Page 9

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SI1405DL-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs125mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)568mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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