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SI3438DV-T1-GE3

SI3438DV-T1-GE3

For Reference Only

Part Number SI3438DV-T1-GE3
PNEDA Part # SI3438DV-T1-GE3
Description MOSFET N-CH 40V 7.4A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3438DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3438DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3438DV-T1-GE3, SI3438DV-T1-GE3 Datasheet (Total Pages: 11, Size: 212.8 KB)
PDFSI3438DV-T1-GE3 Datasheet Cover
SI3438DV-T1-GE3 Datasheet Page 2 SI3438DV-T1-GE3 Datasheet Page 3 SI3438DV-T1-GE3 Datasheet Page 4 SI3438DV-T1-GE3 Datasheet Page 5 SI3438DV-T1-GE3 Datasheet Page 6 SI3438DV-T1-GE3 Datasheet Page 7 SI3438DV-T1-GE3 Datasheet Page 8 SI3438DV-T1-GE3 Datasheet Page 9 SI3438DV-T1-GE3 Datasheet Page 10 SI3438DV-T1-GE3 Datasheet Page 11

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SI3438DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 20V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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