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SI4447ADY-T1-GE3

SI4447ADY-T1-GE3

For Reference Only

Part Number SI4447ADY-T1-GE3
PNEDA Part # SI4447ADY-T1-GE3
Description MOSFET P-CH 40V 7.2A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 125,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4447ADY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4447ADY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4447ADY-T1-GE3, SI4447ADY-T1-GE3 Datasheet (Total Pages: 9, Size: 199.72 KB)
PDFSI4447ADY-T1-GE3 Datasheet Cover
SI4447ADY-T1-GE3 Datasheet Page 2 SI4447ADY-T1-GE3 Datasheet Page 3 SI4447ADY-T1-GE3 Datasheet Page 4 SI4447ADY-T1-GE3 Datasheet Page 5 SI4447ADY-T1-GE3 Datasheet Page 6 SI4447ADY-T1-GE3 Datasheet Page 7 SI4447ADY-T1-GE3 Datasheet Page 8 SI4447ADY-T1-GE3 Datasheet Page 9

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SI4447ADY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds970pF @ 20V
FET Feature-
Power Dissipation (Max)4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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