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SI5933CDC-T1-GE3

SI5933CDC-T1-GE3

For Reference Only

Part Number SI5933CDC-T1-GE3
PNEDA Part # SI5933CDC-T1-GE3
Description MOSFET 2P-CH 20V 3.7A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,366
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5933CDC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5933CDC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5933CDC-T1-GE3, SI5933CDC-T1-GE3 Datasheet (Total Pages: 11, Size: 246.9 KB)
PDFSI5933CDC-T1-E3 Datasheet Cover
SI5933CDC-T1-E3 Datasheet Page 2 SI5933CDC-T1-E3 Datasheet Page 3 SI5933CDC-T1-E3 Datasheet Page 4 SI5933CDC-T1-E3 Datasheet Page 5 SI5933CDC-T1-E3 Datasheet Page 6 SI5933CDC-T1-E3 Datasheet Page 7 SI5933CDC-T1-E3 Datasheet Page 8 SI5933CDC-T1-E3 Datasheet Page 9 SI5933CDC-T1-E3 Datasheet Page 10 SI5933CDC-T1-E3 Datasheet Page 11

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SI5933CDC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.7A
Rds On (Max) @ Id, Vgs144mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds276pF @ 10V
Power - Max2.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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