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SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

For Reference Only

Part Number SIB900EDK-T1-GE3
PNEDA Part # SIB900EDK-T1-GE3
Description MOSFET 2N-CH 20V 1.5A SC-75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB900EDK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB900EDK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIB900EDK-T1-GE3, SIB900EDK-T1-GE3 Datasheet (Total Pages: 7, Size: 135.1 KB)
PDFSIB900EDK-T1-GE3 Datasheet Cover
SIB900EDK-T1-GE3 Datasheet Page 2 SIB900EDK-T1-GE3 Datasheet Page 3 SIB900EDK-T1-GE3 Datasheet Page 4 SIB900EDK-T1-GE3 Datasheet Page 5 SIB900EDK-T1-GE3 Datasheet Page 6 SIB900EDK-T1-GE3 Datasheet Page 7

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SIB900EDK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A
Rds On (Max) @ Id, Vgs225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L Dual
Supplier Device PackagePowerPAK® SC-75-6L Dual

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